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Chemical and tribological studies of MoS2 films on SiC substrates

✍ Scribed by Stephen V. Didziulis; Paul D. Fleischauer; Bonnie L. Soriano; Michael N. Gardos


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
757 KB
Volume
43-44
Category
Article
ISSN
0257-8972

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πŸ“œ SIMILAR VOLUMES


Chemical vapor deposition of Ξ²-SiC on si
✍ J.C. Pazik; G. Kelner; N. Bottka; J.A. Freitas Jr. πŸ“‚ Article πŸ“… 1992 πŸ› Elsevier Science 🌐 English βš– 381 KB

Cubic silicon carbide (t-SiC) films have been grown epitaxially on silicon-on-sapphire (SOS) substrates by chemical vapor deposition. A fresh layer of silicon is first deposited in situ on the SOS substrate at approximately 1050 Β°C. The silicon layer is then carbonized while being heated to 1360 Β°C.