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Charge-trapping memory cell of SiO[sub 2]âSiNâhigh-k dielectric Al[sub 2]O[sub 3] with TaN metal gate for suppressing backward-tunneling effect

✍ Scribed by Lee, Chang-Hyun; Park, Kyu-Charn; Kim, Kinam

No coin nor oath required. For personal study only.

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[IEEE IEEE International Electron Device

✍ Chang Hyun Lee, ; Kyung In Choi, ; Myoung Kwan Cho, ; Yun Heub Song, ; Kyu Charn 📂 Article 📅 2003 🏛 IEEE ⚖ 238 KB

Charge-trapping memory cell of SiO[sub 2]âSiNâhigh-k dielectric Al[sub 2]O[sub 3] with TaN metal gate for suppressing backward-tunneling effect