Charge trapping characteristics of atomic-layer-deposited HfO 2 films with Al 2 O 3 as a blocking oxide for high-density non-volatile memory device applications

✍ Scribed by Maikap, S; Lee, H Y; Wang, T-Y; Tzeng, P-J; Wang, C C; Lee, L S; Liu, K C; Yang, J-R; Tsai, M-J

• Book ID: 127254944
• Publisher: Institute of Physics
• Year: 2007
• Tongue: English
• Weight: 321 KB
• Volume: 22
• Category: Article
• ISSN: 0268-1242
• DOI: 10.1088/0268-1242/22/8/010