Charge trapping and dielectric breakdown in MOS devices in 77–400 K temperature range : C.-L. Huang, S. A. Grot, S. Sh. Gildenblat and V. Bolkhovsky. Solid-St. Electron.32(9), 767 (1989)

• Book ID: 103283468
• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 133 KB
• Volume: 30
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(90)90240-n