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Charge transport in semiconductors with degeneracy effects

✍ Scribed by Frédéric Poupaud; Christian Schmeiser

Publisher
John Wiley and Sons
Year
1991
Tongue
English
Weight
728 KB
Volume
14
Category
Article
ISSN
0170-4214

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✦ Synopsis

Abstract

It has been a common procedure to derive a model for charge transport in degenerate semiconductor material by incorporating a Fermi–Dirac distribution into the classical drift–diffusion model. In this work a Boltzmann equation with a non‐linear collision term is considered. A new fluid dynamical model is derived by considering small perturbations of the thermal equilibrium. The analysis contains an existence and uniqueness proof for the Boltzmann equation, a justification of the perturbation argument and a study of initial boundary value problems for the new fluid dynamical model.

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We describe a method that has procedures similar to the Monte Carlo method for solving the Boltzmann transport equation, but is deterministic, and thus fundamentally different. In this new method, the distribution function is discretized and tracked in phase space. The scattering rates couple initia