Charge transfer in the Ni/SiOx/n-Si(111) system

✍ Scribed by B. Viswanathan; Katsumi Tanaka; I. Toyoshima

• Publisher: Elsevier Science
• Year: 1985
• Tongue: English
• Weight: 536 KB
• Volume: 113
• Category: Article
• ISSN: 0009-2614
• DOI: 10.1016/0009-2614(85)80263-3

✦ Synopsis

Bmding energies of the core level (Ni 2P3f~I and IMh% Auger peak have been measured For the system Ni/SiOJp or n-Si(lll) with different coverages of nickel-The Auger parameter was used to evaluate the re&xation shirt from which the extent of chemical shift was deduced Tbe binding energy shirt has been shown to be a fimctlon of the thiclaress of oxide layer. The ditTerences in the behaviour of the substrates formed Corn n-and p-type silicon show that charge bansfer, though d can account for the observation on the substrate from n-type Si. is dependent on a number of factors like posiaon and density of donor states and tunneling width.