Charge storage characteristics in Al/AlN/Si metal–insulator–semiconductor structure based on deep traps in AlN layer

✍ Scribed by Y.C. Kong; L.Q. Hu; Y.D. Zheng; C.H. Zhou; C. Chen; S.L. Gu; R. Zhang; P. Han; R.L. Jiang; Y. Shi

• Book ID: 106020858
• Publisher: Springer
• Year: 2007
• Tongue: English
• Weight: 393 KB
• Volume: 90
• Category: Article
• ISSN: 1432-0630
• DOI: 10.1007/s00339-007-4319-8