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Charge-collection characteristics of low-power ultrahigh speed, metamorphic AlSb/InAs high-electron mobility transistors (HEMTs)

✍ Scribed by McMorrow, D.; Boos, J.B.; Knudson, A.R.; Buchner, S.; Ming-Jey Yang, ; Bennett, B.R.; Melinger, J.S.


Book ID
120160956
Publisher
IEEE
Year
2000
Tongue
English
Weight
139 KB
Volume
47
Category
Article
ISSN
0018-9499

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