✦ LIBER ✦
Charge carrier recombination centers in high-purity, dislocation-free, float-zoned silicon due to growth-induced microdefects
✍ Scribed by T.H. Wang; T.F. Ciszek; T. Schuyler
- Book ID
- 107790666
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 718 KB
- Volume
- 109
- Category
- Article
- ISSN
- 0022-0248
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