Charge carrier effect on the microwave losses observed on traveling-wave electrodes used in electro-optic modulators
✍ Scribed by H. R. Khazaei; O. Berolo; R. James; W. J. Wang; P. Maigné; M. Young; K. Ozard; M. Reeves; F. M. Ghannouchi
- Publisher
- John Wiley and Sons
- Year
- 1998
- Tongue
- English
- Weight
- 189 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
The free charge carrier effect is used to explain and model microwa¨e losses obser¨ed in tra¨eling-wa¨e electrodes used in electro-( ) optic modulators when the coplanar wa¨eguide CPW electrodes are fabricated on unintentionally doped heterostructure optical ridge wa¨eguides. Microwa¨e losses were measured between 45 MHz and 40 GHz as a function of doping o¨er a range of 1 = 10 8 r cm 3 -N -2 = d 10 18 r cm 3 using both epitaxially grown and ion implanted semi-( ) insulating SI GaAs substrates. Results show that there is a critical residual doping limit at N f 1 = 10 14 r cm 3 , abo¨e which the mid crowa¨e loss increases linearly with doping for 6 m thick epitaxially grown materials.