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Charge accumulation in the buried oxide of SOI structures with the bonded Si/SiO 2 interface under γ-irradiation: effect of preliminary ion implantation

✍ Scribed by Naumova, O V; Fomin, B I; Ilnitsky, M A; Popov, V P


Book ID
118742503
Publisher
Institute of Physics
Year
2012
Tongue
English
Weight
675 KB
Volume
27
Category
Article
ISSN
0268-1242

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