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Charge accumulation in Ge quantum dots in a GaAs/ZnSe/QD-Ge/ZnSe/Ge floating gate transistor structure

✍ Scribed by I. A. Litvinova; I. G. Neizvestnyi; A. V. Prozorov; S. P. Suprun; V. N. Sherstyakova; V. N. Shumskii

No coin nor oath required. For personal study only.

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