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Charge accumulation in GaAs/AlGaAs triple barrier resonant tunneling structures

โœ Scribed by Buckle, P. D.; Dawson, P.; Kuo, C. Y.; Roberts, A. H.; Truscott, W. S.; Lynch, M.; Missous, M.


Book ID
118041035
Publisher
American Institute of Physics
Year
1998
Tongue
English
Weight
355 KB
Volume
83
Category
Article
ISSN
0021-8979

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Population inversion and intersubband el
โœ Y.B Li; J.W Cockburn; J.P Duck; M.S Skolnick; M.J Birkett; I.A Larkin; M Hopkins ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 104 KB

We report the results of interband photoluminescence experiments on a series of GaAs/AlGaAs triple barrier tunnelling structures containing asymmetric coupled quantum wells. These experiments allow the relative populations of the n"1 (E1) and n"2 (E2) electron subbands of the wider quantum well (QW1