Deposition of CuInSe 2 thin film on CuGaSe 2 thin film (CuInSe 2 /CuGaSe 2 ) has been prepared by flash evaporation technique on Corning glass substrates heated at T s = 250 Β°C and annealed at 450 Β°C in an argon atmosphere. The properties of the resulting films have been examined by scanning electro
Characterization of thin film CuInSe2 and CuGaSe2: The existence and identification of secondary phases
β Scribed by J.R. Tuttle; D.S. Albin; R. Noufi
- Publisher
- Elsevier Science
- Year
- 1989
- Weight
- 332 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0379-6787
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β¦ Synopsis
The optical properties of thin film CulnSe2 and CuGaSe2 have been studied in the near-IR and visible wavelength regions (2000-500 nm). Significant sub-bandgap absorption is observed in films of near-stoichiometric and copper-rich compositions, the origin of which is suspected to be a Cu2_~Se secondary phase at grain boundaries and free surfaces. Isolated thin films of Cu2-sSe have been evaluated and show semi-metallic electro-0ptical behavior. The predominant Cu2-6Se phase present is probably cubic, with nearly identical lattice parameters to those of CuInSe2, which makes its detection difficult in composite films. Identification of CurSe4 in CuGaSe2 has been discussed. A microstructural model of CuInSe2 is presented and suggests a means by which the volume per cent content of the secondary phase can be estimated.
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PolycrystaUine thin films of CuInSe2 and CuGaSe2 deposited by thermal evaporation onto heated substrates of 7059 glass and A1203 were studied by electron microprobe analysis, X-ray diffractometry, Hall effect and van der Pauw measurements, and spectrophotometry in the near-infrared and visible range
Phase equilibria in the CuInSe 2 -CuGaSe 2 -2CdS system are investigated using differential-thermal analysis and phase X-ray diffraction. Isothermal section of the system at 870 K, polythermal section 'CuIn 0.75 Ga 0.25 Se 2 '-2CdS, and the liquidus projection in the CuInSe 2 -rich part have been co