Characterization of the Resonant Third-Order Nonlinear Susceptibility of Si-Doped GaN–AlN Quantum Wells and Quantum Dots at 1.5 m

✍ Scribed by Valdueza-Felip, S.; Naranjo, F.B.; Gonzalez-Herraez, M.; Fernandez, H.; Solis, J.; Guillot, F.; Monroy, E.; Nevou, L.; Tchernycheva, M.; Julien, F.H.

• Book ID: 119804715
• Publisher: IEEE
• Year: 2008
• Tongue: English
• Weight: 203 KB
• Volume: 20
• Category: Article
• ISSN: 1041-1135
• DOI: 10.1109/lpt.2008.926842