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Characterization of polycrystalline α-Al2O3, zirconium implanted and annealed at various temperatures

✍ Scribed by C. Donnet; H. Jaffrezic; N. Moncoffre; J. Tousset; G. Fuchs

Book ID
113281086
Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
683 KB
Volume
46
Category
Article
ISSN
0168-583X

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## Abstract Electrical activation studies of Si‐implanted Al~__x__~ Ga~1–__x__~ N (__x__ = 0.1 and 0.18) grown on sapphire substrate have been made as a function of anneal time, anneal temperature, and ion dose. Silicon implantation was done at room temperature with a dose ranging from 5 × 10^13^ t