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Characterization of phosphorus and boron heavily doped LPCVD polysilicon films in the temperature range 293-373 K
✍ Scribed by Boutchich, M.; Ziouche, K.; Godts, P.; Leclercq, D.
- Book ID
- 120082463
- Publisher
- IEEE
- Year
- 2002
- Tongue
- English
- Weight
- 195 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0741-3106
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