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Characterization of P-channel power trench MOSFETs with polycrystalline silicon germanium gate electrode for faster switching

✍ Scribed by Rohit Dikshit; Manmohan Daggubati


Book ID
113916100
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
807 KB
Volume
68
Category
Article
ISSN
0038-1101

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