Characterization of p-CdTe/n-CdS hetero-junctions

✍ Scribed by M.G. Mahesha; Kasturi V. Bangera; G.K. Shivakumar

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 312 KB
• Volume: 12
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/j.mssp.2009.07.014

✦ Synopsis

Nano-crystalline CdTe/CdS thin film hetero-junctions have been grown on glass substrate by thermal evaporation technique. The growth conditions to get stoichiometric compound films have been optimized. The grown hetero-junctions have been characterized for their I-V characteristics. Analysis of I-V characteristics has been made to investigate the current conduction mechanism in p-CdTe/n-CdS hetero-junction. The band gap energy of cadmium telluride and cadmium sulfide films have been computed from the study of variation of resistance with temperature. Based on the study, band diagram for p-CdTe/n-CdS hetero-junction has been proposed.