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Characterization of oriented thin films of WSe2 grown by van der Waals rheotaxy

โœ Scribed by R. Tenne; E. Galun; A. Ennaoui; S. Fiechter; K. Ellmer; M. Kunst; Ch. Koelzow; Ch. Pettenkofer; S. Tiefenbacher; R. Scheer; H. Jungblut; W. Jaegermann

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
553 KB
Volume
272
Category
Article
ISSN
0040-6090

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Secondary ions produced by low-energy He + and Ne + ion impact on van der Waals solid thin films deposited on a silicon substrate were measured as a function of film thickness using a reflectron-type time-of-flight mass spectrometer. The intensities of secondary ions N + and N 3 + produced by 400 eV