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Characterization of optically excited terahertz radiation from arsenic-ion-implanted GaAs

✍ Scribed by G.-R. Lin; C.-L. Pan

Publisher: Springer
Year: 2001
Tongue: English
Weight: 101 KB
Volume: 72
Category: Article
ISSN: 0721-7269
DOI: 10.1007/s003400000430

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