Characterization of neutron irradiated silicon microstrip detectors

✍ Scribed by M. Lenzi; E. Catacchini; C. Civinini; R. D'Alessandro; M. Meschini

• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 480 KB
• Volume: 78
• Category: Article
• ISSN: 0920-5632
• DOI: 10.1016/s0920-5632(99)00621-0

✦ Synopsis

The radiation hardness of silicon microstrip detectors has been investigated on full-size prototypes similar to the ones that will be installed in the forward tracker of CMS, where a very intense radiation environment is envisaged. Silicon detectors were exposed to a neutron beam with 3 different fluences up to 2.4 x 1014 neutrons/cm 2, more than those foreseen at LHC after 10 years of operation. Degradation effects of the device properties regarding reverse current, depletion voltage, bulk and interstrip capacitance has been measured in laboratory as function of bias voltage, temperature and neutron fluence.