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Characterization of molecular beam epitaxially grown InSb layers and diode structures

✍ Scribed by G.S. Lee; P.E. Thompson; J.L. Davis; J.P. Omaggio; W.A. Schmidt

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
301 KB
Volume
36
Category
Article
ISSN
0038-1101

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High quality AlGaN nanocolumns have been grown by molecular beam epitaxy on Si(111) substrates. Scanning Electron Microscopy micrographs show hexagonal, single crystal columns with diameters in the range of 30 to 60 nm. The nominal Al content of the nanocolumns was changed from 16% to 40% by selecti