Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers

✍ Scribed by Leung, B.H.; Chan, N.H.; Fong, W.K.; Zhu, C.F.; Ng, S.W.; Lui, H.F.; Tong, K.Y.; Surya, C.; Lu, L.W.; Ge, W.K.

• Book ID: 114539001
• Publisher: IEEE
• Year: 2002
• Tongue: English
• Weight: 82 KB
• Volume: 49
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.981223