Characterization of CuIn1 − xAlxS2 thin films prepared by thermal evaporation

✍ Scribed by F. Smaïli; M. Kanzari; B. Rezig

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 404 KB
• Volume: 28
• Category: Article
• ISSN: 0928-4931
• DOI: 10.1016/j.msec.2007.10.033

✦ Synopsis

Ingots containing single crystals of the quaternary alloys CuIn 1 -x Al x S 2 (CIAS) were grown by a horizontal Bridgman method for compositions with x = 0, 0.2 and x = 0.4. (CIAS) thin films were prepared by thermal evaporation technique on to glass substrates. Structural and optical properties of the films were studied in function of the Al content. Band gap, and absorption coefficients were determined from the analysis of the optical spectra (transmittance and reflectance as a function of wavelength) recorded by a spectrophotometer. The samples have direct bandgap energies of 1.95 eV (x = 0), 2.06 eV (x = 0,2) and 2.1 eV (x = 0,4). These optical results were correlated with the structural analysis by X-Ray diffraction.