✦ LIBER ✦
Characterization of chemical interdiffusivities at silicon/metal interfaces in initial reaction stages
✍ Scribed by A Zalar; S Hofmann; P Panjan
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 361 KB
- Volume
- 48
- Category
- Article
- ISSN
- 0042-207X
No coin nor oath required. For personal study only.
✦ Synopsis
In order to study the reactivity of Si/Me interfaces, seven model thin-film systems with Me = Al, Ni, Co, Cr, Zr, MO or Wand with a total thickness between 110 and 200nm were prepared by sputter deposition on smooth Sill 11) substrates. The samples were heated using a linear temperature increase between room temperature and different higher temperatures (from 150 to 950°C). The AES sputter depth profiles of as-deposited and heat treated samples allowed a quantitative determination of the change of the interface widths with temperature. The main moving elements in initial reaction stages and the effective chemical interdiffusivities at the Si/Me interfaces were determined by the rate of change of the interface widths. The activation energies for the beginning interfacial reactions at different Si/Me interfaces were obtained from Arrhenius plots and
were found to be between 0.6 and 2.1 eV.