BiFeO3 thin films prepared by MOCVD
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M.S. Kartavtseva; O.Yu. Gorbenko; A.R. Kaul; A.R. Akbashev; T.V. Murzina; S. Fus
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Article
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2007
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Elsevier Science
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English
⚖ 842 KB
BiFeO 3 thin films were grown by metal organic chemical vapour deposition (MOCVD) at the temperature T = 700 °C using Fe(thd) 3 , Bi (C 6 H 5 ) 3 as volatile precursors. High thermal stability of Bi(C 6 H 5 ) 3 makes the film stoichiometry very sensible to the deposition conditions, in particular to