Characterization and photovoltaic device application of dip-coated and rapid thermal annealed CdS films

✍ Scribed by R. Jayakrishnan; J. P. Nair; B. A. Kuruvilla; S. K. Kulkarni; R. K. Pandey

• Book ID: 104634880
• Publisher: Springer US
• Year: 1996
• Tongue: English
• Weight: 546 KB
• Volume: 7
• Category: Article
• ISSN: 0957-4522
• DOI: 10.1007/bf00133115

✦ Synopsis

The structure, composition, electronic and optical properties of dip-coated CdS in the as-deposited condition and following rapid thermal annealing have been investigated. It has been shown that oxygen incorporated in the CdS film can be leached out following rapid thermal annealing. Strongly oriented CdS films with resistivity = 0.16 ~ cm and free electron concentration = 2.65 x 1017 cm -3 have been grown. Thin film heterojunction devices fabricated by non-aqueous electrodeposition of CdTe on a glass-ITO-CdS cathode have been shown to exhibit good rectification behaviour and photovoltaic activity.