Matrix Reactivity of Al and Ga Atoms (M)
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Benjamin Gaertner; Hans-Jörg Himmel; Victoria A. Macrae; Anthony J. Downs; Tim M
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Article
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2004
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John Wiley and Sons
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English
⚖ 298 KB
## Abstract Matrix isolation experiments give evidence for the formation of the loosely bonded metal–silane complex M⋅SiH~4~ by the spontaneous reaction of Al or Ga atoms (M) with silane in a solid Ar matrix at 12 K; however, Ga~2~ appears to insert spontaneously into an SiH bond to form HGaGaSiH~