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Characterization and modeling of the n- and p-channel MOSFETs inversion-layer mobility in the range 25–125°C

✍ Scribed by Cheng-Liang Huang; Narain D. Arora

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
508 KB
Volume
37
Category
Article
ISSN
0038-1101

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