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Characterization and modeling of temperature-dependent barrier heights and ideality factors in GaAs Schottky diodes

✍ Scribed by Dong Myong Kim; Dae Hwan Kim; Soon Young Lee


Book ID
118142312
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
308 KB
Volume
51
Category
Article
ISSN
0038-1101

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Effects of chemical treatment on barrier
✍ M. Diale; F.D. Auret πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 193 KB

We have studied Au/n-GaN Schottky barrier diodes. GaN surfaces have been prepared by cleaning in HCl and (NH 4 ) 2 S prior to metal deposition. The zero-biased barrier heights and ideality factors obtained from the current-voltage characteristics differ from diode to diode, although all the samples