Characterization and Application of the Vapor Phase Decomposition Technique for Trace Metal Analysis on Silicon Oxide Surfaces
✍ Scribed by Hall, L. H.; Sees, J. A.; Schmidt, B. L.
- Publisher
- John Wiley and Sons
- Year
- 1996
- Tongue
- English
- Weight
- 606 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0142-2421
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✦ Synopsis
Vapor phase decomposition-droplet surface etching-graphite furnace atomic absorption spectroscopy (VPD-DSE-GFAAS) is discussed as a technique for the determination of low levels of metals in chemical oxides on silicon surfaces. The VPD-DSGGFAAS technique was found to be statistically equivalent to results obtained by the standard surface techniques of total reflectance x-ray fluorescence spectroscopy (TXRF) and SIMS. The capability of the VPD-DSGGFAAS technique has been extended to detection limits in the lo7 to low lo9 atom range. A positive linear relationship was found for iron, calcium, zinc and aluminum deposited on a silicon wafer from an ammonium hydroxidehydrogen peroxidewater (SC1) solution. Sodium and potassium deposition from SC1 solutions was found to be independent of solution concentrations. Deposition for these metals appeared to be primarily related to localized micron-sized nuclei deposits and not to adsorption on an atomic scale.