✦ LIBER ✦
Characteristics of sub-1/4-μm gate surface channel PMOSFET's using a multilayer gate structure of boron-doped poly-Si on thin nitrogen-doped poly-Si
✍ Scribed by Okazaki, Y.; Nakayama, S.; Miyake, M.; Kobayashi, T.
- Book ID
- 114535954
- Publisher
- IEEE
- Year
- 1994
- Tongue
- English
- Weight
- 732 KB
- Volume
- 41
- Category
- Article
- ISSN
- 0018-9383
No coin nor oath required. For personal study only.