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Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure

✍ Scribed by M. V. Maksimov; A. V. Sakharov; V. V. Lundin; A. S. Usikov; B. V. Pushnyi; I. L. Krestnikov; N. N. Ledentsov; P. S. Kop’ev; Zh. I. Alferov; V. P. Rozum


Book ID
110123056
Publisher
SP MAIK Nauka/Interperiodica
Year
1997
Tongue
English
Weight
74 KB
Volume
23
Category
Article
ISSN
1063-7850

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Stimulated emission is studied in a hexagonal AlGaN/GaN/AlGaN double heterostructure grown on a (0 0 0 1) sapphire substrate by low pressure (200 mbar) metallorganic vapor phase epitaxy. A sharp increase in the edge emitted luminescence intensity is obtained above a threshold excitation density of 4