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Characteristics of Photoconductivity in Amorphous GexSb10Se90—x Thin Films

✍ Scribed by Mathew, G. ;Madhusoodanan, K. N. ;Philip, J.

Publisher
John Wiley and Sons
Year
1998
Tongue
English
Weight
188 KB
Volume
168
Category
Article
ISSN
0031-8965

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✦ Synopsis

Electrical transport in amorphous semiconducting thin films with the general formula Ge x Sb 10 Se 90Àx 10 x 32X5 has been investigated in the dark as well as under illumination. The results are found to be consistent with the ABFH model for photoconductivity. Due to the change in the nature of transitions between localized states, the Ge±Sb±Se system is found to exhibit a photoconductivity maximum when the temperature is increased. The composition with x 25 shows minimum values in photoconductivity and dark conductivity owing to its structure. The observed composition dependence of the transport behaviour and activation energy are discussed in terms of the chemically ordered network model for disordered materials.

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