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Characteristics of metal/sputtered CdTe/n-GaAs diode structures

✍ Scribed by M.B. Das; S.V. Krishnaswamy; R. Petkie; M. Elmuradi

Publisher
Elsevier Science
Year
1983
Tongue
English
Weight
313 KB
Volume
26
Category
Article
ISSN
0038-1101

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Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxially (MOVPE) grown n on p HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and CdZn