Characteristics of inversion-channel and buried-channel MOS devices in 6H-SiC

✍ Scribed by Sheppard, S.T.; Melloch, M.R.; Cooper, J.A., Jr.

• Book ID: 114535770
• Publisher: IEEE
• Year: 1994
• Tongue: English
• Weight: 819 KB
• Volume: 41
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.293356