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Characteristics of a (Quinacridone/Al2O3/Al) MIS Tunnel Diode

✍ Scribed by Muto, J. ;Iwadare, T. ;Hashimoto, S.


Publisher
John Wiley and Sons
Year
1992
Tongue
English
Weight
247 KB
Volume
133
Category
Article
ISSN
0031-8965

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Memory characteristics of Al2O3/La2O3/Al
✍ Hyo June Kim; Seung Yong Cha; Doo Jin Choi πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 388 KB

In order to investigate charge trap characteristics with various thicknesses of blocking and tunnel oxide for application to non-volatile memory devices, we fabricated 5 and 15 nm Al 2 O 3 /5 nm La 2 O 3 /5 nm Al 2 O 3 and 15 nm Al 2 O 3 /5 nm La 2 O 3 /5, 7.5, and 10 nm Al 2 O 3 multi-stack films,