✦ LIBER ✦
Characteristic features of the accumulation of vacancy-and interstitial-type radiation defects in dislocation-free silicon with different oxygen contents
✍ Scribed by I. I. Kolkovskii; V. V. Luk’yanitsa
- Book ID
- 110119648
- Publisher
- Springer
- Year
- 1997
- Tongue
- English
- Weight
- 125 KB
- Volume
- 31
- Category
- Article
- ISSN
- 1063-7826
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