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Characteristic Analysis of p-i-n Thin-Film Phototransistor Using Device Simulation

✍ Scribed by Kimura, M.; Miura, Y.

Book ID
114620626
Publisher
IEEE
Year
2011
Tongue
English
Weight
582 KB
Volume
58
Category
Article
ISSN
0018-9383

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πŸ“œ SIMILAR VOLUMES

Evaluation of trap states at front and b
Evaluation of trap states at front and back oxide interfaces and grain boundaries using electrical characteristic analysis and device simulation of polycrystalline silicon thin-film transistors
✍ Mutsumi Kimura πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 756 KB

## Abstract The trap states at the front and back oxide interfaces and grain boundaries of polycrystalline silicon thin‐film transistors are evaluated by using electrical characteristic analysis and device simulation. First, the method for extracting the trap densities of the front and back oxide i