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Characterisation of a nitrogen ECR plasma source for the MBE growth of the dilute nitride semiconductor GaAsN

✍ Scribed by B.F. Usher; T. Warminski; T. Dieing; Kathryn Prince


Book ID
108280560
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
353 KB
Volume
601
Category
Article
ISSN
0039-6028

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