Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures

✍ Scribed by Rumyantsev, S L; Shur, M S; Levinshtein, M E; Ivanov, P A; Palmour, J W; Agarwal, A K; Hull, B A; Ryu, Sei-Hyung

• Book ID: 125521459
• Publisher: Institute of Physics
• Year: 2009
• Tongue: English
• Weight: 308 KB
• Volume: 24
• Category: Article
• ISSN: 0268-1242
• DOI: 10.1088/0268-1242/24/7/075011