## Abstract Tantalum silicide films of ∼200 nm thick and composition TaSi~2~ were obtained by co‐sputtering in a Varian 3120 S‐gun magnetron system. The films were then introduced in an AES spectrometer and bombarded with Ar^+^ ions of different energies in order to obtain surfaces of different com
✦ LIBER ✦
Changes induced in the room temperature oxidation of TiSix by Ar+ bombardment
✍ Scribed by J.M Sanz; M Clement; J.M Martínez-Duart
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 525 KB
- Volume
- 221
- Category
- Article
- ISSN
- 0040-6090
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