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Changes in interfacial bonding energies in the chemical activation of GaAs surfaces

โœ Scribed by Ning Liu; Thomas F. Kuech

Book ID
107453380
Publisher
Springer US
Year
2005
Tongue
English
Weight
131 KB
Volume
34
Category
Article
ISSN
0361-5235

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## ลฝ . We employed surface sensitive photoelectron spectroscopy PES using synchrotron radiation to investigate the strain of both deposited InAs and GaAs substrates with and without Se-termination. The two distinct chemical components `comprising Ga As bonding and In As bonding states in the As 3d