✦ LIBER ✦

Certification of electrical resistance standards in units of the quantum Hall effect-based ohm

✍ Scribed by V. A. Gusev; T. V. Kozyreva; A. V. Ploshinskii; I. V. Pruss; Yu. P. Semenov; I. V. Khakhamov

Publisher: Springer US
Year: 1993
Tongue: English
Weight: 121 KB
Volume: 36
Category: Article
ISSN: 0543-1972
DOI: 10.1007/bf00977844

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effect of pressure on the electrical res

Effect of pressure on the electrical resistivity and Hall effect in single crystals of CeRhSb

✍ T Hiraoka; Y Okayama; N Yosino; T Takabatake; H Fujii 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 207 KB

Collapse of quantized Hall resistance an

Collapse of quantized Hall resistance and breakdown of dissipationless state in the integer quantum Hall effect: filling factor dependence

✍ H. Iizuka; S. Kawaji; T. Okamoto 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 84 KB

Transmission of the dimensions of the un

Transmission of the dimensions of the units of electric capacitance, resistance, and inductance in the new system of standards

✍ T. M. Gushchina; F. E. Kurochkin; I. N. Krotkov 📂 Article 📅 1976 🏛 Springer US 🌐 English ⚖ 591 KB

Disorder-induced features of the transve

Disorder-induced features of the transverse resistance in a Si-MOSFET in the quantum Hall effect regime

✍ I. Shlimak; K.-J. Friedland; V. Ginodman; S.V. Kravchenko 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 297 KB

## Abstract We investigate two features of the transverse resistance __R~xy~__ in a Si‐MOSFET in the quantum Hall effect regime. The first, the “overshoot” phenomenon, is observed at filling factor ν = 3. In this case, when the magnetic field increases and the filling factor ν approaches ν = 3, __R

Quantum tunneling of the apex oxygen ato

Quantum tunneling of the apex oxygen atoms in YBa2Cu3O7−δ superconductors: Anharmonic effects on the out of plane electrical resistivity

✍ Marco Zoli 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 232 KB

Determination of the In-Plane Effective

Determination of the In-Plane Effective Mass and Quantum Lifetime of 2D Electrons in Modulation-Doped In0.53Ga0.47As/In0.52Al0.48As Heterojunctions from the Quantum Oscillations in Hall Resistance

✍ Tiras, E. ;Cankurtaran, M. ;�elik, H. ;Balkan, N. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 195 KB 👁 2 views