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charge, an in situ spectroscopic automatic ellipsometer has been associated with a multipole reactor. The ellipsometer is described; it is based on the photo-acoustic modulation technique and allows a fast data acquisition rate, From real tim~ ellipsometry at a fixed wavelength on a growing film, the growth rate and the refractive index of the material are determined and some indications are given on the growth process. The dielectric constant spectrum measurement allows a posteriori characterization of thd influence of plasma conditions or thermal treatments on the optical properties of the sample without air contamination.
Ion projection microlithography G. STENGL, R. KAITNA, H. LOSCHNER, R. RIEDER, P. WOLF and R. SACHER Solid St. Technol., 104 (August 1982) Ion Microlithography is a novel production technique for integrated circuits with micrometer and submicrometer design patterns. This technique employs a high resolution demagnifying ion-optical imaging system in connection with a precision step-and-repeat state. Design" patterns are contained in a self-supporting mask reticle. Because of the 10 -demagnification, the ion beams transmitted through the mask openings are concentrated onto the wafer target allowing milli-second exposure times per chip for organic resists. Furthermore, with exposure times of seconds per die, insulating (SiO2, SiaN4), semicondueting (Si, GaAs) and metallic layers can be structured by ion-bombardment-enchaneed etching. Apart from direct structuring, these layers can be used as very thin inorganic resist materials. Ion Projection Microliography permits the development of new technological processes, thus extending and complementing the scope of photo-, x-ray-, and e-beam lithography.
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