## Abstract Different thickness of ultrathin films of magnetite (Fe~3~O~4~) have been grown epitaxially on zinc‐blende narrow band‐gap semiconductor InAs(100) surfaces by __in situ__ post‐growth annealing of ultrathin epitaxial Fe films at 300 °C in an oxygen partial pressure of 5 × 10^−5^ mbar. Re
✦ LIBER ✦
CEMS study of the growth and properties of Fe3O4 films
✍ Scribed by Fujii, T.; Takano, M.; Katano, R.; Bando, Y.; Isozumi, Y.
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 303 KB
- Volume
- 99
- Category
- Article
- ISSN
- 0022-0248
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