CdTe Epitaxial Growth by Isothermal Closed Space Configuration

✍ Scribed by E.M. Larramendi; E. Purón; O. de Melo

• Book ID: 101370485
• Publisher: John Wiley and Sons
• Year: 2002
• Tongue: English
• Weight: 71 KB
• Volume: 230
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/1521-3951(200204)230:2<339::aid-pssb339>3.0.co;2-e

✦ Synopsis

The growth and structural characterization of CdTe epitaxial films on GaAs(100) substrates are reported. The samples were obtained by a novel isothermal closed space sublimation (ICSS) technique, which was previously used for the growth of ZnTe in atomic layer epitaxy regime. For growing the films, a GaAs substrate is exposed alternately to the elemental sources (Cd and Te) at isothermal conditions employing a closed space geometry. The influence of the growth parameters on the composition and the thickness of the films is discussed.