## Abstract The effects of the barrier height reduction caused by the channel electron velocity due to the effective electron mass difference between silicon and oxide on the gate leakage current in a MOSFET are discussed The calculations show such a barrier height reduction will have a large effec
✦ LIBER ✦
Causes of the difference between the design and experimental errors of two-stage current transformers
✍ Scribed by N. E. Mironyuk; É. I. Popov
- Publisher
- Springer US
- Year
- 1987
- Tongue
- English
- Weight
- 202 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0543-1972
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