Cause of the fill factor loss of a-Si:H p–i–n devices with ZnO:Al front electrode: Blocking contact vs. defect density

✍ Scribed by Santos, J.D.; Fernández, S.; Cárabe, J.; Gandía, J.J.

• Book ID: 122562986
• Publisher: Elsevier Science
• Year: 2013
• Tongue: English
• Weight: 757 KB
• Volume: 548
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/j.tsf.2013.09.078